Researchers from the Pierre Aigrain Laboratory in the ENS Physics department in Paris, France, have discovered a new cooling mechanism for electronic components made of graphene deposited on boron nitride. The efficiency of this mechanism reportedly allowed the team to reach electric intensities …
 

“The laws of physics dictate that increasing the density of components on a chipset implies increasing dissipation and thus heat. Nowadays, with the advances in 2D material devices, this question becomes particularly critical since components are required to be one atom thick.
 
By producing a graphene-based transistor deposited on a boron nitride substrate, the team demonstrated a new cooling mechanism 10 times more efficient than basic heat diffusion. This new mechanism, which exploits the two-dimensional nature of the materials opens a “thermal bridge” between the graphene sheet and the substrate.
 
The researchers have demonstrated the effectiveness of this mechanism by imposing in graphene levels of electrical current still unexplored, up to the intrinsic limit of the material and without any degradation of the device. This result is an important step towards the development of graphene-based high-frequency electronic transistors….”

 
Graphene on hBN transistor displays remarkable cooling properties
Source: Alerts

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